Current-Voltage Characteristics of Graphane p-n Junctions

In contrast to graphene, which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the 2-D geometry, unique transport features of graphene, and the possibility of doping graphane, p and n regions can be defined so that 2-D p-n junctio...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-01, Vol.57 (1), p.209-214
Main Authors: Gharekhanlou, B., Khorasani, S.
Format: Article
Language:English
Subjects:
Applied sciences
Artificial neural networks
Carbon
Compound structure devices
Data mining
Electric potential
Electronics
Exact sciences and technology
Graphane
graphene
p-n junction
P-n junctions
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In contrast to graphene, which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the 2-D geometry, unique transport features of graphene, and the possibility of doping graphane, p and n regions can be defined so that 2-D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain the current-voltage characteristics of such a 2-D p-n junction based on graphane. As we show, within the approximation of Shockley's law of junctions, an ideal I-V characteristic for this p-n junction is to be expected.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2034494