A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme

Due to their small cell size, low power consumption, and fast page based read/program operations, NAND type flash memories are well suited for portable mass storage. This 3.3 V only 32 Mb NAND flash memory achieves typical 2.3 MB/s program performance with an incremental step pulse programming (ISPP...

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Bibliographic Details
Main Authors: Kang-Deog Suh, Byung-Hoon Suh, Young-Ho Um, Jin-Ki Kim, Young-Joon Choi, Yong-Nam Koh, Sung-Soo Lee, Suk-Chon Kwon, Byung-Soon Choi, Jin-Sun Yum, Jung-Hyuk Choi, Jang-Rae Kim, Hyung-Kyu Lim
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
CMOS process
Decoding
Energy consumption
Flash memory
Interference
Latches
Ocean temperature
Space vector pulse width modulation
Voltage control
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Summary:Due to their small cell size, low power consumption, and fast page based read/program operations, NAND type flash memories are well suited for portable mass storage. This 3.3 V only 32 Mb NAND flash memory achieves typical 2.3 MB/s program performance with an incremental step pulse programming (ISPP) scheme. In addition, self-boosting of program inhibit voltages lowers the page programming current to 4.3 mA and a 24 MB/s read throughput is achieved with interleaved data paths. The device is fabricated in a 0.5 /spl mu/m CMOS process on a 94.9 mm/sup 2/ die.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.1995.535460