A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications

In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications in demonstrated. This three-stage power amplifier is designed to f...

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Bibliographic Details
Main Authors: De-Zhong Li, Cong Wang, Wen-Cheng Huang, Krishna, R., Sung-Jin Cho, Shrestha, B., Gear Inpyo Kyung, Nam-Young Kim
Format: Conference Proceeding
Language:English
Subjects:
Electron mobility
Gallium arsenide
HEMTs
High power amplifiers
Integrated circuit technology
Microwave transistors
MMICs
MODFETs
PHEMTs
Power amplifiers
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Summary:In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications in demonstrated. This three-stage power amplifier is designed to fully match the 50 ¿ input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (P 1dB ) of 29.5 dBm, a power added efficiency (PAE) of 31%, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 × 1.964 mm 2 on GaAS substrate.
DOI:10.1109/MAPE.2009.5355712