Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements

We present experimental results on the high-frequency electrical impedance of In/sub 0.35/Ga/sub 0.65/As-GaAs multiquantum-well lasers with varied p-doping levels in the active region. The analysis of the data, using a simple three rate equation model, provides information about the dynamical time c...

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Bibliographic Details
Published in:IEEE photonics technology letters 1996-10, Vol.8 (10), p.1294-1296
Main Authors: Esquivias, I., Weisser, S., Romero, B., Ralston, D., Rosenzweig, J.
Format: Article
Language:English
Subjects:
Charge carrier lifetime
Data analysis
Diodes
Equations
Frequency
Gallium arsenide
Impedance measurement
Information analysis
Laser modes
Quantum well lasers
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Summary:We present experimental results on the high-frequency electrical impedance of In/sub 0.35/Ga/sub 0.65/As-GaAs multiquantum-well lasers with varied p-doping levels in the active region. The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions. The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers. The effective capture time is estimated to be between 2 and 5 ps.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.536632