Structural and spectroscopic studies of InGaN/GaN quantum structures implanted with rare earth ions

In this work the luminescence of RE ions implanted into InGaN/GaN multi-quantum wells (MQWs) and supperlattice (SL) structures was investigated. The interface quality between the QW and SL layers before and after implantation as well as after thermal annealing treatment has been studied. The corresp...

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Bibliographic Details
Main Authors: Jadwisienczak, W.M., Ebdah, M.A., Wang, J., Kordesch, M.E., Anders, A.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Gallium nitride
Luminescence
Optical buffering
Particle beam optics
Quantum dots
Quantum well devices
Semiconductor materials
Spectroscopy
Temperature distribution
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Summary:In this work the luminescence of RE ions implanted into InGaN/GaN multi-quantum wells (MQWs) and supperlattice (SL) structures was investigated. The interface quality between the QW and SL layers before and after implantation as well as after thermal annealing treatment has been studied. The corresponding luminescence from RE-doped InGaN/GaN structures was investigated by means of optical spectroscopy in the spectral range from 300 nm to 1100 nm at different temperatures.
DOI:10.1109/ISDRS.2009.5378137