Fabrication of high compressive stress silicon nitride membrane in strained silicon technology

The mechanism of compressive stress in silicon nitride membrane is studied in this paper. The effects of the various process parameters on the compressive stress in silicon nitride are analyzed and discussed on the basis of the current method using PECVD equipment. The high compressive stress silico...

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Bibliographic Details
Main Authors: Bin Shu, Heming Zhang, Rongxi Xuan, Xianying Dai, Huiyong Hu, Jianjun Song, Liang Liang, Jianan Cui
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Biomembranes
Compressive stress
Fabrication
Frequency
Hydrogen
Nitrogen
Silicon
silicon nitride
strained Si
Tensile stress
Thermal stresses
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Summary:The mechanism of compressive stress in silicon nitride membrane is studied in this paper. The effects of the various process parameters on the compressive stress in silicon nitride are analyzed and discussed on the basis of the current method using PECVD equipment. The high compressive stress silicon nitride membrane has been fabricated on the optimization of the process parameters, and the compressive stress is up to -1.08 GPa. Finally, the method of further improving the compressive stress in silicon nitride membrane is put forward.
DOI:10.1109/EDSSC.2009.5394243