Mechanism of conversion and propagation of dislocations in 4H-SiC epilayer

The elastic energies of four kinds of dislocations per unit growth length have been calculated. We propose that threading screw dislocations(TSDs) along can propagate into epilayer but can not convert to TEDs. We suggest that both basal plane mix dislocations(B MD s) and threading screw dislocations...

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Bibliographic Details
Main Authors: Ruixia Miao, Yuming Zhang, Yimen Zhang, Xiaoyan Tang, Qingfeng Gai
Format: Conference Proceeding
Language:English
Subjects:
Chemical vapor deposition
dislocations
Epitaxial growth
Etching
Fasteners
Image converters
mechanism of conversion and propagation
Scanning electron microscopy
Silicon carbide
Stacking
Substrates
Voltage
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Summary:The elastic energies of four kinds of dislocations per unit growth length have been calculated. We propose that threading screw dislocations(TSDs) along can propagate into epilayer but can not convert to TEDs. We suggest that both basal plane mix dislocations(B MD s) and threading screw dislocations (B TSD s) can convert to TEDs, and B MD s convert to TEDs much easier than B TSD s in epilayer because of the higher elastic energy. Based on the experimental results, the relationship between the dislocation density and the conversion and propagation of dislocations is discussed.
DOI:10.1109/EDSSC.2009.5394256