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Design challenges in nanometric embedded memories
Embedded memories comprise over half the die area in modern SOC ICs. These circuits enable large gains in performance, however they bring with them many challenges. As CMOS technology scales deep into the nano-metric region the size and density of embedded memories are increasing, both of which resu...
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creator | Rennie, D.J. Shakir, T. Sachdev, M. |
description | Embedded memories comprise over half the die area in modern SOC ICs. These circuits enable large gains in performance, however they bring with them many challenges. As CMOS technology scales deep into the nano-metric region the size and density of embedded memories are increasing, both of which result in increased challenges for designers. This paper describes the design challenges intrinsic to the implementation of embedded memories in modern nanometric CMOS processes. |
doi_str_mv | 10.1109/ICSCS.2009.5412617 |
format | conference_proceeding |
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These circuits enable large gains in performance, however they bring with them many challenges. As CMOS technology scales deep into the nano-metric region the size and density of embedded memories are increasing, both of which result in increased challenges for designers. This paper describes the design challenges intrinsic to the implementation of embedded memories in modern nanometric CMOS processes.</description><subject>Circuits and systems</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS memory circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Delay</subject><subject>Joining processes</subject><subject>MOSFETs</subject><subject>Random access memory</subject><subject>scaling</subject><subject>Signal design</subject><subject>soft error</subject><subject>SRAM</subject><subject>variability</subject><isbn>1424443970</isbn><isbn>9781424443970</isbn><isbn>1424443989</isbn><isbn>9781424443987</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFj81KA0EQhEckoIl5Ab3sC2zsnumdn6OsGgMBD8k9zE8njuxuZCcX396IAetS1EdRUELcIywQwT2u2k27WUgAt2gIpUZzJaZIkoiUs-76PxiYiOlv0YE0Vt-IeSmfcBY10il7K_CZSz4MVfzwXcfDgUuVh2rww7Hn05hjxX3glDhVPffHMXO5E5O97wrPLz4T29eXbftWr9-Xq_ZpXWcHp9pRg77xntDqFBM7tiF6MsFRAsCAoIJWMu6lll5pFQJFOrNoIBhpnZqJh7_ZzMy7rzH3fvzeXe6qH3GyRkk</recordid><startdate>200911</startdate><enddate>200911</enddate><creator>Rennie, D.J.</creator><creator>Shakir, T.</creator><creator>Sachdev, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200911</creationdate><title>Design challenges in nanometric embedded memories</title><author>Rennie, D.J. ; Shakir, T. ; Sachdev, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-9451a5aa4186dcde9e8bca47b94d001b103b632cf262a363bb4c403bc70b72893</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Circuits and systems</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>CMOS memory circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Delay</topic><topic>Joining processes</topic><topic>MOSFETs</topic><topic>Random access memory</topic><topic>scaling</topic><topic>Signal design</topic><topic>soft error</topic><topic>SRAM</topic><topic>variability</topic><toplevel>online_resources</toplevel><creatorcontrib>Rennie, D.J.</creatorcontrib><creatorcontrib>Shakir, T.</creatorcontrib><creatorcontrib>Sachdev, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rennie, D.J.</au><au>Shakir, T.</au><au>Sachdev, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design challenges in nanometric embedded memories</atitle><btitle>2009 3rd International Conference on Signals, Circuits and Systems (SCS)</btitle><stitle>ICSCS</stitle><date>2009-11</date><risdate>2009</risdate><spage>1</spage><epage>8</epage><pages>1-8</pages><isbn>1424443970</isbn><isbn>9781424443970</isbn><eisbn>1424443989</eisbn><eisbn>9781424443987</eisbn><abstract>Embedded memories comprise over half the die area in modern SOC ICs. These circuits enable large gains in performance, however they bring with them many challenges. As CMOS technology scales deep into the nano-metric region the size and density of embedded memories are increasing, both of which result in increased challenges for designers. This paper describes the design challenges intrinsic to the implementation of embedded memories in modern nanometric CMOS processes.</abstract><pub>IEEE</pub><doi>10.1109/ICSCS.2009.5412617</doi><tpages>8</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Circuits and systems CMOS CMOS integrated circuits CMOS memory circuits CMOS process CMOS technology Delay Joining processes MOSFETs Random access memory scaling Signal design soft error SRAM variability |
title | Design challenges in nanometric embedded memories |
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