Degradation Mechanisms of InGaN Laser Diodes

We discuss various mechanisms of laser diode degradation based on our own experiments and on the available literature data. In most of the cases, degradation of InGaN laser diodes occurs through the increase of the threshold current with almost constant slope efficiency. The threshold current change...

Full description

Saved in:
Bibliographic Details
Published in:Proceedings of the IEEE 2010-07, Vol.98 (7), p.1214-1219
Main Authors: Perlin, Piotr, Marona, Lucja, Leszczynski, Mike, Suski, Tadek, Wisniewski, Przemek, Czernecki, Robert, Grzegory, Izabella
Format: Article
Language:English
Subjects:
Degradation
Diode lasers
Hydrocarbons
Lasers
Light emitting diodes
Photochemistry
reliability
Semiconductor device packaging
Semiconductor lasers
Semiconductor materials
Substrates
Threshold current
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We discuss various mechanisms of laser diode degradation based on our own experiments and on the available literature data. In most of the cases, degradation of InGaN laser diodes occurs through the increase of the threshold current with almost constant slope efficiency. The threshold current change follows frequently the square root on time dependence. Though this type of behavior has usually been attributed to magnesium acceptor diffusion, no firm proof of such a hypothesis has so far been presented. In contrast, there is an increasing number of reported experiments showing that the most important factor contributing to fast (hours), and medium time (hundreds of hours) degradation is the process of carbon deposition. This process involves photochemical reactions leading to the decomposition of hydrocarbons existing in the laser diode environment. This process resembles very closely the mechanism responsible for 980-nm laser diode degradation and known as Package Induced Failure.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2009.2030826