Investigation of resistive probes with high sensitivity

Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO ¿ ). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcript...

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Bibliographic Details
Main Authors: Sang Wan Kim, Jae Young Song, Jong Pil Kim, Woo Young Choi, Han Ki Chung, Jae Hyun Park, Hyungsoo Ko, Hongsik Park, Chulmin Park, Seungbum Hong, Sung-Hoon Choa, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
Format: Conference Proceeding
Language:English
Subjects:
Anisotropic magnetoresistance
Computer science
Etching
Fabrication
Ferroelectric materials
Ion implantation
Laboratories
MOSFETs
Probes
Silicon
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Summary:Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO ¿ ). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2008.5418407