Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperatur...

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Bibliographic Details
Main Authors: Hong, B.H., Jung, Y.C., Hwang, S.W., Cho, K.H., Yeo, K.H., Yeoh, Y.Y., Suk, S.D., Li, M., Kim, D.-W., Park, D., Oh, K.S., Lee, W.-S.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Electrons
Germanium silicon alloys
Heart
Isotopes
Modems
MOSFETs
Physics
Quantum dots
Silicon germanium
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Summary:Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2008.5418464