Thermal Characteristics of 1.55- \mum InGaAlAs Quantum Well Buried Heterostructure Lasers

• Published in: IEEE journal of quantum electronics 2010-05, Vol.46 (5), p.700-705
• Main Authors: Sayid, S.A., Marko, I.P., Cannard, P.J., Xin Chen, Rivers, L.J., Lealman, I.F., Sweeney, S.J.
• Format: Article
• Language: English
• Subjects: Auger recombination; buried heterostructure lasers; efficency; high temperature; Indium phosphide; InGaAlAs; Optical losses; Optical sensors; quantum well; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Stimulated emission; Temperature sensors; Threshold current
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2009.2039117

We have investigated the threshold current I th and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of ith is due to nonradiative recombination, which accounts for up to ˜80% of J th at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant nonradiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency η i is ˜80% at 20°C remaining stable up to 80°C. In contrast, the internal optical loss, α i , increases from 15 cm -1 at 20°C to 22 cm -1 at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.