A deep silicon via (DSV) ground for sige power amplifiers

A low parasitic inductance ground for SiGe power amplifiers has been implemented using a deep silicon via (DSV). The advantages and opportunities that this approach opens for the power amplifier (PA) design process are demonstrated. DSV resistance, inductance, and data from IV sweep, RF characteriza...

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Bibliographic Details
Main Authors: Blaschke, V., Thibeault, T., Lanzerotti, L., Cureton, C., Zwingman, R., KarRoy, A., Preisler, E., Howard, D., Racanelli, M.
Format: Conference Proceeding
Language:English
Subjects:
common emitter configuration
deep silicon via
Electrical resistance measurement
emitter ballasting
Germanium silicon alloys
Inductance
Inductors
low parasitic inductance ground
Plugs
Power amplifiers
Radiofrequency amplifiers
Shunt (electrical)
SiGe power amplifiers
Silicon germanium
thermal stability
Tungsten
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Summary:A low parasitic inductance ground for SiGe power amplifiers has been implemented using a deep silicon via (DSV). The advantages and opportunities that this approach opens for the power amplifier (PA) design process are demonstrated. DSV resistance, inductance, and data from IV sweep, RF characterization and load pull measurements are analyzed.
DOI:10.1109/SMIC.2010.5422966