A comprehensive study of Ge1−xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

For the first time, growth of high-quality Ge-rich Ge 1-x Si x (0 ¿ × ¿ 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge 1-x Si x and a better thermal stability of the nickel germanide on Ge 1-x Si x were observed. A higher rectifying ratio wi...

Full description

Saved in:
Bibliographic Details
Main Authors: Guang-Li Luo, Shih-Chiang Huang, Cheng-Ting Chung, Dawei Heh, Chao-Hsin Chien, Chao-Ching Cheng, Yao-Jen Lee, Wen-Fa Wu, Chiung-Chih Hsu, Mei-Ling Kuo, Jay-Yi Yao, Mao-Nan Chang, Chee-Wee Liu, Chenming Hu, Chun-Yen Chang, Fu-Liang Yang
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Chaos
Crystalline materials
MOSFETs
Photonic band gap
Plasma temperature
Substrates
Surface cleaning
Tensile strain
Thermal stability
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:For the first time, growth of high-quality Ge-rich Ge 1-x Si x (0 ¿ × ¿ 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge 1-x Si x and a better thermal stability of the nickel germanide on Ge 1-x Si x were observed. A higher rectifying ratio with a reduced diode leakage current in n + -Ge 1-x Si x /p-Ge 1-x Si x is compared with n + -Ge/p-Ge. These results indicate that it is suitable for Ge 1-x Si x to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2009.5424246