Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

Graphene with a high carrier mobility of more than 10,000 cm 2 /Vs on SiO 2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high perform...

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Bibliographic Details
Main Authors: Nagashio, K., Nishimura, T., Kita, K., Toriumi, A.
Format: Conference Proceeding
Language:English
Subjects:
Chromium
Conductivity
Contact resistance
Electrodes
Gold
Inorganic materials
Nonhomogeneous media
Performance analysis
Temperature dependence
Voltage
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Summary:Graphene with a high carrier mobility of more than 10,000 cm 2 /Vs on SiO 2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact properties by separating from the intrinsic conduction of graphene.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2009.5424297