InAlN/GaN heterostructures for microwave power and beyond

InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth...

Full description

Saved in:
Bibliographic Details
Main Authors: Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjdoub, F., Pietzka, C., Delage, S., diForte- Poisson, M.-A., Morvan, E., Sarazin, N., Jacquet, J.-C., Dua, C., Carlin, J.-F., Grandjean, N., Py, M. A., Gonschorek, M., Kuzmik, J., Pogany, D., Pozzovivo, G., Ostermaier, C., Toth, L., Pecz, B., De Jaeger, J.-C., Gaquiere, C., Cico, K., Frohlich, K., Georgakilas, A. I., Iliopoulos, E., Konstantinidis, G., Giessen, C., Heuken, M., Schineller, B.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
FETs
Gallium nitride
Interface states
Lattices
Oxidation
Passivation
Robust stability
Thermal management
Transconductance
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth of high quality diamond films to combine two of the most stable semiconductors. Thus, applications reach from high power microwaves systems and high temperature electronics to sensing in harsh environment.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2009.5424395