Direct growth of Bismuth Telluride nanowires by On-Film Formation of Nanowires for high-efficiency thermoelectric devices

We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350°C. Th...

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Bibliographic Details
Main Authors: Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Voorhees, P.W., Wooyoung Lee
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Bismuth
Crystallization
Mechanical factors
Nanowires
Semiconductor films
Tellurium
Thermal expansion
Thermal stresses
Thermoelectric devices
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Summary:We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.
ISSN:2159-3523
DOI:10.1109/INEC.2010.5424556