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Direct growth of Bismuth Telluride nanowires by On-Film Formation of Nanowires for high-efficiency thermoelectric devices
We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350°C. Th...
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| creator | Jinhee Ham Wooyoung Shim Do Hyun Kim Seunghyun Lee Jongwook Roh Sung Woo Sohn Kyu Hwan Oh Voorhees, P.W. Wooyoung Lee |
| description | We report a novel stress-induced method to grow single crystalline Bi 2 Te 3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2 Te 3 nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film. |
| doi_str_mv | 10.1109/INEC.2010.5424556 |
| format | conference_proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2159-3523 |
| ispartof | 2010 3rd International Nanoelectronics Conference (INEC), 2010, p.105-106 |
| issn | 2159-3523 |
| language | eng |
| recordid | cdi_ieee_primary_5424556 |
| source | IEEE Xplore All Conference Series |
| subjects | Annealing Bismuth Crystallization Mechanical factors Nanowires Semiconductor films Tellurium Thermal expansion Thermal stresses Thermoelectric devices |
| title | Direct growth of Bismuth Telluride nanowires by On-Film Formation of Nanowires for high-efficiency thermoelectric devices |
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