Wall angle control of reactive ion etched features on a silicon substrate

This paper investigated the ability of the etched wall angle controllable. We used silicon with a patterned wet film photo resistance as a base substrate. A slider is fabricated by the reactive ion etching (RIE) process. In the RIE process, the controllable factors were designed based on a design of...

Full description

Saved in:
Bibliographic Details
Main Authors: Limcharoen, A., Pakpum, C., Leksakul, K.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Etching
Fabrication
Magnetic heads
Magnetic materials
Mathematical model
Process control
Silicon
Substrates
US Department of Energy
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper investigated the ability of the etched wall angle controllable. We used silicon with a patterned wet film photo resistance as a base substrate. A slider is fabricated by the reactive ion etching (RIE) process. In the RIE process, the controllable factors were designed based on a design of experiment approach. And the mathematical model of the reactive ion etching (RIE) process, with the quality of slider (wall angle), is studied using the Design of Experiment (DOE) approach. Finally, the mathematical model of etched wall angle was constructed and evaluated.
ISSN:2159-3523
DOI:10.1109/INEC.2010.5424597