Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films

To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSi x O y ) and hafnium-silicate (HfSi m O n ) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma...

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Bibliographic Details
Main Authors: Singh Meena, J., Min-Ching Chu, Fu-Hsiang Ko
Format: Conference Proceeding
Language:English
Subjects:
Dielectric films
Dielectric substrates
Metal-insulator structures
MIM capacitors
Oxidation
Plasma density
Plasma devices
Plasma properties
Plasma temperature
Polyimides
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Summary:To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSi x O y ) and hafnium-silicate (HfSi m O n ) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (~250°C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ~10 -9 Acm -2 at 5V and maximum-capacitance densities 12.10 (ZrSi x O y ) and 14.32 fF/¿m 2 (HfSi m O n ), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.
ISSN:2159-3523
DOI:10.1109/INEC.2010.5425076