1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-06, Vol.22 (11), p.748-750
Main Authors: Rautiainen, Jussi, Lyytikäinen, Jari, Toikkanen, Lauri, Nikkinen, Jari, Sirbu, Alexei, Mereuta, Alexandru, Caliman, Andrei, Kapon, Eli, Okhotnikov, Oleg G
Format: Article
Language:English
Subjects:
Distributed Bragg reflectors
Indium phosphide
Laser excitation
Laser fusion
Laser mode locking
Mode-locked lasers
Optical materials
Optical pumping
Pump lasers
quantum-well (QW) lasers
Semiconductor lasers
Semiconductor materials
surface-emitting lasers
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Summary:We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2045494