1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 2010-06, Vol.22 (11), p.748-750
Main Authors: Rautiainen, Jussi, Lyytikäinen, Jari, Toikkanen, Lauri, Nikkinen, Jari, Sirbu, Alexei, Mereuta, Alexandru, Caliman, Andrei, Kapon, Eli, Okhotnikov, Oleg G
Format: Article
Language:English
Subjects:
Distributed Bragg reflectors
Indium phosphide
Laser excitation
Laser fusion
Laser mode locking
Mode-locked lasers
Optical materials
Optical pumping
Pump lasers
quantum-well (QW) lasers
Semiconductor lasers
Semiconductor materials
surface-emitting lasers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3
cites cdi_FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3
container_end_page 750
container_issue 11
container_start_page 748
container_title IEEE photonics technology letters
container_volume 22
creator Rautiainen, Jussi
Lyytikäinen, Jari
Toikkanen, Lauri
Nikkinen, Jari
Sirbu, Alexei
Mereuta, Alexandru
Caliman, Andrei
Kapon, Eli
Okhotnikov, Oleg G
description We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.
doi_str_mv 10.1109/LPT.2010.2045494
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_ieee_primary_5432962</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5432962</ieee_id><sourcerecordid>10_1109_LPT_2010_2045494</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wUv-wNaZJJvdPZbaVmGLQiu9CMvko7jWtpLsHvz3prR4mmc-3jk8jN0jjBCheqzfViMBqROgclWpCzbASmEGWKjLxJAYUebX7CbGLwBUuVQDVuNIZvxj1_MdXxycz-qD3XrHn9q45TVFH_i67T75mjYJZ31Muzm1e057x5fT5XjBl13obdcHH2_Z1Ya-o7871yF7n01Xk-esfp2_TMZ1ZoWWXWawLItCE1pwzgokTYUvyFUejqOylFZC5bS1loT2xrjCGNDGGCTMyckhg9NfGw4xBr9pfkK7o_DbIDRHG02y0RxtNGcbKfJwirTe-__zXElRaSH_AFXZWfA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Rautiainen, Jussi ; Lyytikäinen, Jari ; Toikkanen, Lauri ; Nikkinen, Jari ; Sirbu, Alexei ; Mereuta, Alexandru ; Caliman, Andrei ; Kapon, Eli ; Okhotnikov, Oleg G</creator><creatorcontrib>Rautiainen, Jussi ; Lyytikäinen, Jari ; Toikkanen, Lauri ; Nikkinen, Jari ; Sirbu, Alexei ; Mereuta, Alexandru ; Caliman, Andrei ; Kapon, Eli ; Okhotnikov, Oleg G</creatorcontrib><description>We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2010.2045494</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Distributed Bragg reflectors ; Indium phosphide ; Laser excitation ; Laser fusion ; Laser mode locking ; Mode-locked lasers ; Optical materials ; Optical pumping ; Pump lasers ; quantum-well (QW) lasers ; Semiconductor lasers ; Semiconductor materials ; surface-emitting lasers</subject><ispartof>IEEE photonics technology letters, 2010-06, Vol.22 (11), p.748-750</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3</citedby><cites>FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5432962$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Rautiainen, Jussi</creatorcontrib><creatorcontrib>Lyytikäinen, Jari</creatorcontrib><creatorcontrib>Toikkanen, Lauri</creatorcontrib><creatorcontrib>Nikkinen, Jari</creatorcontrib><creatorcontrib>Sirbu, Alexei</creatorcontrib><creatorcontrib>Mereuta, Alexandru</creatorcontrib><creatorcontrib>Caliman, Andrei</creatorcontrib><creatorcontrib>Kapon, Eli</creatorcontrib><creatorcontrib>Okhotnikov, Oleg G</creatorcontrib><title>1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.</description><subject>Distributed Bragg reflectors</subject><subject>Indium phosphide</subject><subject>Laser excitation</subject><subject>Laser fusion</subject><subject>Laser mode locking</subject><subject>Mode-locked lasers</subject><subject>Optical materials</subject><subject>Optical pumping</subject><subject>Pump lasers</subject><subject>quantum-well (QW) lasers</subject><subject>Semiconductor lasers</subject><subject>Semiconductor materials</subject><subject>surface-emitting lasers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKt3wUv-wNaZJJvdPZbaVmGLQiu9CMvko7jWtpLsHvz3prR4mmc-3jk8jN0jjBCheqzfViMBqROgclWpCzbASmEGWKjLxJAYUebX7CbGLwBUuVQDVuNIZvxj1_MdXxycz-qD3XrHn9q45TVFH_i67T75mjYJZ31Muzm1e057x5fT5XjBl13obdcHH2_Z1Ya-o7871yF7n01Xk-esfp2_TMZ1ZoWWXWawLItCE1pwzgokTYUvyFUejqOylFZC5bS1loT2xrjCGNDGGCTMyckhg9NfGw4xBr9pfkK7o_DbIDRHG02y0RxtNGcbKfJwirTe-__zXElRaSH_AFXZWfA</recordid><startdate>20100601</startdate><enddate>20100601</enddate><creator>Rautiainen, Jussi</creator><creator>Lyytikäinen, Jari</creator><creator>Toikkanen, Lauri</creator><creator>Nikkinen, Jari</creator><creator>Sirbu, Alexei</creator><creator>Mereuta, Alexandru</creator><creator>Caliman, Andrei</creator><creator>Kapon, Eli</creator><creator>Okhotnikov, Oleg G</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100601</creationdate><title>1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures</title><author>Rautiainen, Jussi ; Lyytikäinen, Jari ; Toikkanen, Lauri ; Nikkinen, Jari ; Sirbu, Alexei ; Mereuta, Alexandru ; Caliman, Andrei ; Kapon, Eli ; Okhotnikov, Oleg G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Distributed Bragg reflectors</topic><topic>Indium phosphide</topic><topic>Laser excitation</topic><topic>Laser fusion</topic><topic>Laser mode locking</topic><topic>Mode-locked lasers</topic><topic>Optical materials</topic><topic>Optical pumping</topic><topic>Pump lasers</topic><topic>quantum-well (QW) lasers</topic><topic>Semiconductor lasers</topic><topic>Semiconductor materials</topic><topic>surface-emitting lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Rautiainen, Jussi</creatorcontrib><creatorcontrib>Lyytikäinen, Jari</creatorcontrib><creatorcontrib>Toikkanen, Lauri</creatorcontrib><creatorcontrib>Nikkinen, Jari</creatorcontrib><creatorcontrib>Sirbu, Alexei</creatorcontrib><creatorcontrib>Mereuta, Alexandru</creatorcontrib><creatorcontrib>Caliman, Andrei</creatorcontrib><creatorcontrib>Kapon, Eli</creatorcontrib><creatorcontrib>Okhotnikov, Oleg G</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rautiainen, Jussi</au><au>Lyytikäinen, Jari</au><au>Toikkanen, Lauri</au><au>Nikkinen, Jari</au><au>Sirbu, Alexei</au><au>Mereuta, Alexandru</au><au>Caliman, Andrei</au><au>Kapon, Eli</au><au>Okhotnikov, Oleg G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2010-06-01</date><risdate>2010</risdate><volume>22</volume><issue>11</issue><spage>748</spage><epage>750</epage><pages>748-750</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2010.2045494</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 2010-06, Vol.22 (11), p.748-750
issn 1041-1135
1941-0174
language eng
recordid cdi_ieee_primary_5432962
source IEEE Electronic Library (IEL) Journals
subjects Distributed Bragg reflectors
Indium phosphide
Laser excitation
Laser fusion
Laser mode locking
Mode-locked lasers
Optical materials
Optical pumping
Pump lasers
quantum-well (QW) lasers
Semiconductor lasers
Semiconductor materials
surface-emitting lasers
title 1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T06%3A50%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=1.3-%20%5Cmu%20m%20Mode-Locked%20Disk%20Laser%20With%20Wafer%20Fused%20Gain%20and%20SESAM%20Structures&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Rautiainen,%20Jussi&rft.date=2010-06-01&rft.volume=22&rft.issue=11&rft.spage=748&rft.epage=750&rft.pages=748-750&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2010.2045494&rft_dat=%3Ccrossref_ieee_%3E10_1109_LPT_2010_2045494%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c263t-b188776a1c0ddc21a6a7e7ad9e01c0d883c309d6ccca26ebbd7bb06bbb1a15ad3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5432962&rfr_iscdi=true