A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM

A ferroelectric capacitor overdrive with shield-bitline drive for 1.3 V chain FeRAM has been verified using a 0.13 ¿m 576 Kb test chip with 0.719 ¿m 2 cell. This technique applies 0.24 V bias to ferroelectric capacitors without increasing stress and bitline capacitance. The measured tail-to-tail cel...

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Bibliographic Details
Main Authors: Takashima, D., Shiga, H., Hashimoto, D., Miyakawa, T., Shiratake, S., Hoya, K., Ogiwara, R., Takizawa, R., Doumae, S., Fukuda, R., Watanabe, Y., Fujii, S., Ozaki, T., Kanaya, H., Shuto, S., Yamakawa, K., Kunishima, I., Hamamoto, T., Nitayama, A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Capacitors
Degradation
Drives
Ferroelectric films
Ferroelectric materials
Nonvolatile memory
Random access memory
Testing
Voltage
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Summary:A ferroelectric capacitor overdrive with shield-bitline drive for 1.3 V chain FeRAM has been verified using a 0.13 ¿m 576 Kb test chip with 0.719 ¿m 2 cell. This technique applies 0.24 V bias to ferroelectric capacitors without increasing stress and bitline capacitance. The measured tail-to-tail cell signal is improved by 100 mV and doubled in 1.3 V array operation.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2010.5433950