Low frequency noise in quantum-well GexSi1-x PMOSFET's

This paper describes the low frequency noise behavior of a quantum-well Ge x Si 1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes impo...

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Bibliographic Details
Main Authors: Chang, J., Nayak, D.K., Raman, V.K., Woo, J.C.S., Park, J.S., Wang, K.L., Viswanathan, C.R.
Format: Conference Proceeding
Language:English
Subjects:
1f noise
Low-frequency noise
Molecular beam epitaxial growth
MOSFET circuits
Noise generators
Noise measurement
Quantum well devices
Quantum wells
Semiconductor device noise
Temperature
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Summary:This paper describes the low frequency noise behavior of a quantum-well Ge x Si 1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes important.