Low frequency noise in quantum-well GexSi1-x PMOSFET's

This paper describes the low frequency noise behavior of a quantum-well Ge x Si 1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes impo...

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Main Authors: Chang, J., Nayak, D.K., Raman, V.K., Woo, J.C.S., Park, J.S., Wang, K.L., Viswanathan, C.R.
Format: Conference Proceeding
Language:English
Subjects:
1f noise
Low-frequency noise
Molecular beam epitaxial growth
MOSFET circuits
Noise generators
Noise measurement
Quantum well devices
Quantum wells
Semiconductor device noise
Temperature
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creator Chang, J.
Nayak, D.K.
Raman, V.K.
Woo, J.C.S.
Park, J.S.
Wang, K.L.
Viswanathan, C.R.
description This paper describes the low frequency noise behavior of a quantum-well Ge x Si 1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes important.
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Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes important.</description><identifier>ISBN: 0444890661</identifier><identifier>ISBN: 9780444890665</identifier><language>eng</language><publisher>IEEE</publisher><subject>1f noise ; Low-frequency noise ; Molecular beam epitaxial growth ; MOSFET circuits ; Noise generators ; Noise measurement ; Quantum well devices ; Quantum wells ; Semiconductor device noise ; Temperature</subject><ispartof>ESSDERC '91: 21st European Solid State Device Research Conference, 1991, p.19-22</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5436260$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5436260$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chang, J.</creatorcontrib><creatorcontrib>Nayak, D.K.</creatorcontrib><creatorcontrib>Raman, V.K.</creatorcontrib><creatorcontrib>Woo, J.C.S.</creatorcontrib><creatorcontrib>Park, J.S.</creatorcontrib><creatorcontrib>Wang, K.L.</creatorcontrib><creatorcontrib>Viswanathan, C.R.</creatorcontrib><title>Low frequency noise in quantum-well GexSi1-x PMOSFET's</title><title>ESSDERC '91: 21st European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>This paper describes the low frequency noise behavior of a quantum-well Ge x Si 1-x p-channel MOSFET. 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ispartof ESSDERC '91: 21st European Solid State Device Research Conference, 1991, p.19-22
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects 1f noise
Low-frequency noise
Molecular beam epitaxial growth
MOSFET circuits
Noise generators
Noise measurement
Quantum well devices
Quantum wells
Semiconductor device noise
Temperature
title Low frequency noise in quantum-well GexSi1-x PMOSFET's
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