Performance of AlGaAs/GaAs heterostructure bipolar transistors grown by MOVPE

A self-aligned fabrication process for AlGaAs/GaAs heterostructure bipolar transistors grown by metal-organic vapor phase epitaxy has been developed. A DC-amplification of 500 has been achieved on large area devices and a maximum frequency of oscillation, f max , of more than 30 GHz has been obtaine...

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Bibliographic Details
Main Authors: Willen, B, Haga, D, Landgren, G
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Doping
Epitaxial growth
Epitaxial layers
Gallium arsenide
Gold
Heterojunction bipolar transistors
Molecular beam epitaxial growth
Temperature
Zinc
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Summary:A self-aligned fabrication process for AlGaAs/GaAs heterostructure bipolar transistors grown by metal-organic vapor phase epitaxy has been developed. A DC-amplification of 500 has been achieved on large area devices and a maximum frequency of oscillation, f max , of more than 30 GHz has been obtained for devices with two stripes of 2.5x10 μm emitter area. We have also characterized the intrinsic and extinsic time constants and outlined future device optimization expected to improve the performance into the 60 GHz range.