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Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors
Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC characteristics investigated over a wide range of temperatures (80 to 400K). The collector currents were typically found to be ideal over six ord...
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| creator | Martin, A.S.R. Gell, M.A. Reeder, A.A. Godfrey, D.J. Jones, M.E. Gibbings, C.J. Tuppen, C.G. |
| description | Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC characteristics investigated over a wide range of temperatures (80 to 400K). The collector currents were typically found to be ideal over six orders of magnitude at room temperature. Nonideal behaviour observed below 180K is ascribed to surface recombination effects. The mechanisms associated with the nonideal behaviour of the base currents are discussed and the enhanced ideality seen towards 400K assigned to a reduced dominance of recombination mechanisms. |
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The collector currents were typically found to be ideal over six orders of magnitude at room temperature. Nonideal behaviour observed below 180K is ascribed to surface recombination effects. The mechanisms associated with the nonideal behaviour of the base currents are discussed and the enhanced ideality seen towards 400K assigned to a reduced dominance of recombination mechanisms.</description><identifier>ISBN: 9780750300650</identifier><identifier>ISBN: 0750300655</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boron ; Breakdown voltage ; Capacitors ; Doping profiles ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Numerical simulation ; Random access memory ; Silicon germanium ; Temperature dependence</subject><ispartof>ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.473-476</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5436315$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5436315$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Martin, A.S.R.</creatorcontrib><creatorcontrib>Gell, M.A.</creatorcontrib><creatorcontrib>Reeder, A.A.</creatorcontrib><creatorcontrib>Godfrey, D.J.</creatorcontrib><creatorcontrib>Jones, M.E.</creatorcontrib><creatorcontrib>Gibbings, C.J.</creatorcontrib><creatorcontrib>Tuppen, C.G.</creatorcontrib><title>Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors</title><title>ESSDERC '90: 20th European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC characteristics investigated over a wide range of temperatures (80 to 400K). The collector currents were typically found to be ideal over six orders of magnitude at room temperature. Nonideal behaviour observed below 180K is ascribed to surface recombination effects. The mechanisms associated with the nonideal behaviour of the base currents are discussed and the enhanced ideality seen towards 400K assigned to a reduced dominance of recombination mechanisms.</description><subject>Boron</subject><subject>Breakdown voltage</subject><subject>Capacitors</subject><subject>Doping profiles</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Numerical simulation</subject><subject>Random access memory</subject><subject>Silicon germanium</subject><subject>Temperature dependence</subject><isbn>9780750300650</isbn><isbn>0750300655</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1990</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotjM1Kw0AURgdEUGqewM28QPAm85ulRK1CoYvWjZtyZ-aGTmmTMDNd-PZG9Gw-OHycG1Z1xoJRIAC0gjtW5XyCBama1rb37GtPl5kSlmsiHmimMdDoiU8Df-m5P2JCXyjFXKLPv3YXn3ZxTfxIi55O19GXOI3cxXk6Y-Il4ZiX95TyA7sd8Jyp-t8V-3x73ffv9Wa7_uifN3VsjCq1B3ANgHKhQxeEtNIrCi7YDiEM2EptBVnhrYXONVKjcVYb4QcUaoBOiRV7_OtGIjrMKV4wfR-UFFo0SvwAUhNNJw</recordid><startdate>199009</startdate><enddate>199009</enddate><creator>Martin, A.S.R.</creator><creator>Gell, M.A.</creator><creator>Reeder, A.A.</creator><creator>Godfrey, D.J.</creator><creator>Jones, M.E.</creator><creator>Gibbings, C.J.</creator><creator>Tuppen, C.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>199009</creationdate><title>Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors</title><author>Martin, A.S.R. ; Gell, M.A. ; Reeder, A.A. ; Godfrey, D.J. ; Jones, M.E. ; Gibbings, C.J. ; Tuppen, C.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-c00b1005bd9abd3484c5edbd89a0dfa24683e83c8809b146a7b8673cfa35f0953</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Boron</topic><topic>Breakdown voltage</topic><topic>Capacitors</topic><topic>Doping profiles</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Numerical simulation</topic><topic>Random access memory</topic><topic>Silicon germanium</topic><topic>Temperature dependence</topic><toplevel>online_resources</toplevel><creatorcontrib>Martin, A.S.R.</creatorcontrib><creatorcontrib>Gell, M.A.</creatorcontrib><creatorcontrib>Reeder, A.A.</creatorcontrib><creatorcontrib>Godfrey, D.J.</creatorcontrib><creatorcontrib>Jones, M.E.</creatorcontrib><creatorcontrib>Gibbings, C.J.</creatorcontrib><creatorcontrib>Tuppen, C.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martin, A.S.R.</au><au>Gell, M.A.</au><au>Reeder, A.A.</au><au>Godfrey, D.J.</au><au>Jones, M.E.</au><au>Gibbings, C.J.</au><au>Tuppen, C.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors</atitle><btitle>ESSDERC '90: 20th European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>1990-09</date><risdate>1990</risdate><spage>473</spage><epage>476</epage><pages>473-476</pages><isbn>9780750300650</isbn><isbn>0750300655</isbn><abstract>Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC characteristics investigated over a wide range of temperatures (80 to 400K). The collector currents were typically found to be ideal over six orders of magnitude at room temperature. Nonideal behaviour observed below 180K is ascribed to surface recombination effects. The mechanisms associated with the nonideal behaviour of the base currents are discussed and the enhanced ideality seen towards 400K assigned to a reduced dominance of recombination mechanisms.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780750300650 |
| ispartof | ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.473-476 |
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| language | eng |
| recordid | cdi_ieee_primary_5436315 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Breakdown voltage Capacitors Doping profiles Germanium silicon alloys Heterojunction bipolar transistors Numerical simulation Random access memory Silicon germanium Temperature dependence |
| title | Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors |
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