An improved model of plasma etching including temperature dependence: comparison between simulation and experimental results

The temperature dependence of the plasma etching of silicon by SF 6 has been studied. A purely reactive model involving a few parameters is presented. Parameter values are extracted from experimental data, and results of the simulations carried out with these parameters are compared with the experim...

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Bibliographic Details
Main Authors: Gerodolle, A, Pelletier, J, Drouot, S
Format: Conference Proceeding
Language:English
Subjects:
Equations
Plasma applications
Plasma simulation
Plasma temperature
Silicon
Solid modeling
Sputter etching
Sputtering
Temperature dependence
Temperature distribution
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Summary:The temperature dependence of the plasma etching of silicon by SF 6 has been studied. A purely reactive model involving a few parameters is presented. Parameter values are extracted from experimental data, and results of the simulations carried out with these parameters are compared with the experimental profiles.