An improved model of plasma etching including temperature dependence: comparison between simulation and experimental results

The temperature dependence of the plasma etching of silicon by SF 6 has been studied. A purely reactive model involving a few parameters is presented. Parameter values are extracted from experimental data, and results of the simulations carried out with these parameters are compared with the experim...

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Main Authors: Gerodolle, A, Pelletier, J, Drouot, S
Format: Conference Proceeding
Language:English
Subjects:
Equations
Plasma applications
Plasma simulation
Plasma temperature
Silicon
Solid modeling
Sputter etching
Sputtering
Temperature dependence
Temperature distribution
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creator Gerodolle, A
Pelletier, J
Drouot, S
description The temperature dependence of the plasma etching of silicon by SF 6 has been studied. A purely reactive model involving a few parameters is presented. Parameter values are extracted from experimental data, and results of the simulations carried out with these parameters are compared with the experimental profiles.
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identifier ISBN: 9780750300650
ispartof ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.209-212
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Equations
Plasma applications
Plasma simulation
Plasma temperature
Silicon
Solid modeling
Sputter etching
Sputtering
Temperature dependence
Temperature distribution
title An improved model of plasma etching including temperature dependence: comparison between simulation and experimental results
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