Two-dimensional Aspects of Ion Enhanced Reactive Etching of Silicon with SF6

A model for plasma silicon etching by SF6 is presented; based on the work of Petit-Pelletier, it has been implemented in a simulator, so as to explain two-dimensional effects. It is shown how this model, with its very simple assumptions on fluxes, allow a variety of observed profiles to be simulated...

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Bibliographic Details
Main Author: Gerodolle, A.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Equations
Etching
Plasma applications
Plasma measurements
Plasma simulation
Shape measurement
Silicon
Solid modeling
Sulfur hexafluoride
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Summary:A model for plasma silicon etching by SF6 is presented; based on the work of Petit-Pelletier, it has been implemented in a simulator, so as to explain two-dimensional effects. It is shown how this model, with its very simple assumptions on fluxes, allow a variety of observed profiles to be simulated.
DOI:10.1007/978-3-642-52314-4_42