Emitter Concentration and Interface Effects in the Base-Emitter Characteristics of A1GaAs/GaAs Heterojunction Bipolar Transistors

Saved in:
Bibliographic Details
Main Authors: Camara, P., Munoz, E., Izpura, I., Lablanca, J., Lapena, E., Pate, M. A., Hill, G., Mistry, P., Roberts, J.S., Hall, H.Y.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Doping
Gallium arsenide
Heterojunction bipolar transistors
Integrated circuit technology
Knee
MOCVD
Molecular beam epitaxial growth
Telecommunication standards
Threshold voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary: