Limitations on n/p Spacing Due to Shadowing Effects in a 0.7μm Retrograde Well CMOS Process

Use of high energy ion implantation for retrograde wells requires thick resist layers to prevent implant penetration. Shadowing of the n-well implant results in a displacement in the position of the n-well edge, dependent on the position across the wafer and implant angle, thereby requiring a larger...

Full description

Saved in:
Bibliographic Details
Main Authors: Pitt, M.G., van der Plas, P.A.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
Implants
Isolation technology
Laboratories
Programmable logic arrays
Resists
Shadow mapping
Tellurium
Threshold voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Use of high energy ion implantation for retrograde wells requires thick resist layers to prevent implant penetration. Shadowing of the n-well implant results in a displacement in the position of the n-well edge, dependent on the position across the wafer and implant angle, thereby requiring a larger minimum design rule. Electrical measurement of n + /n-well field transistors as a function of spacing and orientation has been used to investigate the amount of shadowing which occurs for nominal 7° implants. Shadowing effects were found to vary from 0.15 to 0.25μm across a typical 4 inch diameter wafer.