Microwave Power GaAs/AlGaAs Heterojunction Bipolar Transistor Modelling

A high power heterojunction bipolar transistor has been designed and fabricated. A model of this transistor has been developed for the SPICE simulation package. A program has been written to use SPICE to run simulations on the model and calculate matching conditions for optimum output power.

Saved in:
Bibliographic Details
Published in:ESSDERC '88: 18th European Solid State Device Research Conference 1988-09, p.c4-579-c4-582
Main Authors: Metcalfe, J.G., Hayes, R.C., Holden, A.J., Long, A.P.
Format: Article
Language:English
Subjects:
Breakdown voltage
Gallium arsenide
Heterojunction bipolar transistors
Impedance
Integrated circuit modeling
MESFETs
Microwave devices
Microwave transistors
Power transistors
SPICE
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A high power heterojunction bipolar transistor has been designed and fabricated. A model of this transistor has been developed for the SPICE simulation package. A program has been written to use SPICE to run simulations on the model and calculate matching conditions for optimum output power.
DOI:10.1051/jphyscol:19884122