Investigation of the Influence of DX Centers on HEMT Operation at Room Temperature

A study of DX centers in GaAIAs layers is presented, both experimental and theoretical. It is shown that due to DX centers, at room temperature, the microwave transconductance of HEMTs can be considerably higher than that obtained from the DC regime, and approaches the values which could be expected...

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Bibliographic Details
Published in:ESSDERC '88: 18th European Solid State Device Research Conference 1988-09, p.c4-705-c4-708
Main Authors: Godts, P., Constant, E., Zimmermann, J., Depreeuw, D.
Format: Article
Language:English
Subjects:
Boundary conditions
Electrons
Gallium arsenide
HEMTs
Impurities
Poisson equations
Resumes
Temperature
Transconductance
Voltage
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Summary:A study of DX centers in GaAIAs layers is presented, both experimental and theoretical. It is shown that due to DX centers, at room temperature, the microwave transconductance of HEMTs can be considerably higher than that obtained from the DC regime, and approaches the values which could be expected if DX centers did not exist. As a result, for room temperature applications special structures designed in order to eliminate DX centers are not really necessary.
DOI:10.1051/jphyscol:19884148