Transient charge-based model for SiGe HBTs

A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for...

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Bibliographic Details
Main Authors: Jacob, J., DasGupta, A., Chakravorty, A.
Format: Conference Proceeding
Language:English
Subjects:
Base charge partitioning
Closed-form solution
Electron emission
Equations
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Integrated circuit modeling
Jacobian matrices
Medical simulation
QS approximation
SiGe HBTs
Silicon germanium
TICC Relations
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Summary:A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.
DOI:10.1109/ELECTRO.2009.5441172