Using IGBT in Quench Protection of a 2 MJ SMES Magnet

In order to increase energy dumping speed, IGBT (insulated gate bipolar transistor) is used in quench protection of a 2 MJ superconducting magnet. 88 resistors, each connects in series with an IGBT, are connected in series-parallel connection to form a controllable varistor. On/off of the IGBTs are...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2010-06, Vol.20 (3), p.2083-2086
Main Authors: Lei, Yuanzhong, Chen, Shunzhong, Li, Xiaoqi, Dai, Yinming, Zhao, Baozhi, Song, Shousen, Cheng, Junsheng, Wang, Qiuliang
Format: Article
Language:English
Subjects:
Applied sciences
Circuit breakers
Circuit synthesis
DC circuit breaker
Direct energy conversion and energy accumulation
Dumping
Electric potential
Electrical engineering. Electrical power engineering
Electrical power engineering
Electromagnets
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Energy accumulation
Energy of formation
Exact sciences and technology
IGBT
Insulated gate bipolar transistors
Other multijunction devices. Power transistors. Thyristors
Processors
Protection
quench protection
Resistors
Samarium
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
superconducting magnet
Superconducting magnetic energy storage
Superconducting magnets
Training
Various equipment and components
Varistors
Voltage
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Description
Summary:In order to increase energy dumping speed, IGBT (insulated gate bipolar transistor) is used in quench protection of a 2 MJ superconducting magnet. 88 resistors, each connects in series with an IGBT, are connected in series-parallel connection to form a controllable varistor. On/off of the IGBTs are controlled by two single chip processors. Energy dumping with nearly constant magnet terminal voltage is realized in training quenches of the magnet. The necessary breaking capacity of the circuit breaker is also lowered. Details of quench protection electric circuit design and experimental results are presented.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2010.2044499