Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing

A flexible thin-film transistor (TFT) was made by integrating a high- HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum satu...

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Bibliographic Details
Published in:IEEE electron device letters 2010-07, Vol.31 (7), p.680-682
Main Authors: Nai-Chao Su, Shui-Jinn Wang, Chin-Chuan Huang, Yu-Han Chen, Hao-Yuan Huang, Chen-Kuo Chiang, Chin, Albert
Format: Article
Language:English
Subjects:
Acceptability
Devices
Dielectric substrates
Displays
Fabrication
Flexible electronics
Flexible thin-film transistors (TFTs)
Hafnium compounds
HfLaO
high- kappa
High-K gate dielectrics
InGaZnO (IGZO)
Polyimides
Saturation
Semiconductor devices
Swing
Temperature
Thin film transistors
Threshold voltage
Transistors
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Summary:A flexible thin-film transistor (TFT) was made by integrating a high- HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm 2 /V s, and an acceptable on/off current ratio of 2 × 10 -5 . The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2047232