SPICE Macromodel of Spin-Torque-Transfer-Operated Magnetic Tunnel Junctions

The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient chara...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-06, Vol.57 (6), p.1425-1430
Main Authors: Harms, Jonathan D, Ebrahimi, Farbod, Xiaofeng Yao, Jian-Ping Wang
Format: Article
Language:English
Subjects:
Capacitors
Devices
Electric potential
Flip-flops
Hysteresis
Integrated circuit modeling
Macromodel
magnetic random-access memory (MRAM)
magnetic tunnel junction (MTJ)
Magnetic tunneling
Resistance
Semiconductor device modeling
SPICE
Spices
spin-torque-transfer (STT)
Switches
Switching
Switching circuits
Tunnel junctions
Voltage
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Description
Summary:The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient characteristics of an MTJ, including the hysteresis, bias voltage dependence of the resistance, and the critical switching current versus the critical switching time. The model was designed to work over a wide range of operating conditions. Simulation and analysis of an MTJ-based D flip-flop are presented to demonstrate possible applications of the model.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2047073