Laser Diodes for Gas Sensing Emitting at 3.06 \mum at Room Temperature

Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm 2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavel...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-08, Vol.22 (15), p.1084-1086
Main Authors: Belahsene, Sofiane, Naehle, Lars, Fischer, Marc, Koeth, Johannes, Boissier, Guilhem, Grech, Pierre, Narcy, Grégoire, Vicet, Aurore, Rouillard, Yves
Format: Article
Language:English
Subjects:
Absorption
Charge carrier processes
Diode lasers
Distributed-feedback (DFB) lasers
Gas lasers
Molecular beam epitaxial growth
Quantum well lasers
quantum-well (QW) lasers
Semiconductor lasers
Spectroscopy
Temperature sensors
Threshold current
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Summary:Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm 2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2049989