Application of coherent resonant tunnelling theory in GaAs RTD fabrication

Resonant tunnelling transmission coefficient FWHM (full width at half-maximum) curves of GaAs/AlAs/ In 0.1 Ga 0.9 As double-barrier structures are computed and illustrated, and the distribution of these curves clearly show the main physical mechanism of RTD (resonant tunnelling diode) and the route...

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Bibliographic Details
Main Authors: Yibin Wu, Ruixia Yang, Kewu Yang, Yaohui Shang, Xiazheng Bu, Chenliang Niu, Hui Zhao, Jianfeng Wang
Format: Conference Proceeding
Language:English
Subjects:
Application specific integrated circuits
Digital integrated circuits
Diodes
Fabrication
Gallium arsenide
Integrated circuit technology
Manufacturing industries
Molecular beam epitaxial growth
Resonant tunneling devices
Wave functions
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Summary:Resonant tunnelling transmission coefficient FWHM (full width at half-maximum) curves of GaAs/AlAs/ In 0.1 Ga 0.9 As double-barrier structures are computed and illustrated, and the distribution of these curves clearly show the main physical mechanism of RTD (resonant tunnelling diode) and the route of design to desired RTD's features. As example, several RTD epi-layer structures are worked out with above curves and are grown by molecular beam epitaxy method. X-ray layer thickness measurement results of these structures are exactly identical with the design data, and also the interfaces are very flat. The devices are fabricated, and the I-V features are characterized. These I-V data of our samples demonstrate a good corresponding relation to the curves and typical peak-to-valley current ratio (PVCR) reaching 8.25 with peak current density 112KA/cm 2 .
DOI:10.1109/IWJT.2010.5474905