Piezoresistivity Study in } Thin Film for Sensor Application at Room Temperature

In this letter, we report the piezoresistive effect at room temperature of a Al x Ga 1-x As thin film, which has been integrated on the beams of an accelerometer as sensing elements to detect the external strain. The Al x Ga 1-x As piezoresistive thin film was grown by metal organic chemical vapor d...

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Bibliographic Details
Published in:IEEE sensors journal 2011-01, Vol.11 (1), p.91-92
Main Authors: Li, Qiuzhu, Liu, Guowen, Zhang, Binzhen, Zhang, Guojun, Zhang, Kairui
Format: Article
Language:English
Subjects:
Accelerometers
Capacitive sensors
Chemical elements
Chemical sensors
GaAs/AlGaAs
Gallium arsenide
gauge factor
micromachined accelerometer
Micromachining
Piezoresistance
piezoresistive
Temperature sensors
Thin film sensors
Transistors
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Summary:In this letter, we report the piezoresistive effect at room temperature of a Al x Ga 1-x As thin film, which has been integrated on the beams of an accelerometer as sensing elements to detect the external strain. The Al x Ga 1-x As piezoresistive thin film was grown by metal organic chemical vapor deposition (MOCVD) on a semi-insulating (001) GaAs substrate. And the GaAs-based piezoresistive accelerometer has been processed with advanced surface micromachining processes and GaAs bulk micromachining processes. The measurements of piezoresistive properties were performed for tensile strains by static experiments. The measured maximum gauge factor G (ΔR/R = Gε) for the AlGaAs thin film can be estimated to 70. Meanwhile, the dynamic experiments showed the sensor response.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2010.2048896