Study of electric field-based lifetime projection method in IMD TDDB

Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacing. So a lifetime projection method, based on equal...

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Bibliographic Details
Main Authors: Zhang, W, Zeng, X, Liu, W, Lim, Y K, Liu, J F, Chua, E C
Format: Conference Proceeding
Language:English
Subjects:
Condition monitoring
Dielectric breakdown
Dielectric materials
Dielectric measurements
equal electric field
Leakage current
low-k
Scanning electron microscopy
Schottky emission
Shape
Testing
time-dependent dielectric breakdown
Voltage
Weibull distribution
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Summary:Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacing. So a lifetime projection method, based on equal electric field, is reported. A more realistic lifetime is achieved while predicting whole lot TDDB life-time. Moreover, monitoring leakage current could be adopted into process monitoring strategy.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488703