Prediction of NBTI degradation for circuit under AC operation

A model predicting the negative bias temperature instability (NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1 GHz....

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Bibliographic Details
Main Authors: Tsai, Y S, Jha, N K, Lee, Y.-H, Ranjan, R, Wang, W, Shih, J R, Chen, M J, Lee, J H, Wu, K
Format: Conference Proceeding
Language:English
Subjects:
AC generators
Degradation
FETs
Frequency
MOSFET circuits
Negative bias temperature instability
Niobium compounds
Predictive models
Ring oscillators
Titanium compounds
Online Access:Request full text
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Description
Summary:A model predicting the negative bias temperature instability (NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1 GHz. Based on the experimental data and the simulation results, hole traps generation is considered to be major factor for AC NBTI degradation. An AC/DC NBTI improvement factor of around 10 has been observed at low frequency of 0.01 Hz while it is significantly larger (~10000) at 1 GHz frequency range. It is established that the measurement techniques are very crucial for accurate NBTI reliability estimation.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488752