Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM

Predictions of single and multiple cell upsets in a 65 nm bulk CMOS SRAM are presented for the low-energy (

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Bibliographic Details
Main Authors: Sierawski, Brian D, Warren, Kevin M, Reed, Robert A, Weller, Robert A, Mendenhall, Marcus M, Schrimpf, Ronald D, Baumann, Robert C, Zhu, Vivian
Format: Conference Proceeding
Language:English
Subjects:
Error correction codes
Field programmable gate arrays
Neutrons
Particle beams
Predictive models
Protons
Random access memory
Scattering
Single event upset
Testing
Online Access:Request full text
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Description
Summary:Predictions of single and multiple cell upsets in a 65 nm bulk CMOS SRAM are presented for the low-energy (
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488796