Reliability status of GaN transistors and MMICs in Europe

Recent DC- and RF-reliability results of European GaN HEMTs for high frequency power and MMIC applications between 2 and 18 GHz will be presented. The DC-stress test experiments have been performed at high current and high voltage settings in order to test the devices in the different regimes during...

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Bibliographic Details
Main Authors: Dammann, M, Cäsar, M, Konstanzer, H, Waltereit, P, Quay, R, Bronner, W, Kiefer, R, Müller, S, Mikulla, M, van der Wel, P J, Rödle, T, Bourgeois, F, Riepe, K
Format: Conference Proceeding
Language:English
Subjects:
DC-stress test
Europe
Gallium nitride
GaN HEMT
GaN MMIC
HEMTs
Integrated circuit reliability
Life testing
MMICs
MODFETs
Radio frequency
reliability
RF-stress test
Temperature
Voltage
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Summary:Recent DC- and RF-reliability results of European GaN HEMTs for high frequency power and MMIC applications between 2 and 18 GHz will be presented. The DC-stress test experiments have been performed at high current and high voltage settings in order to test the devices in the different regimes during large signal operation. GaN HEMTs and one stage MMICs have also been tested under RF-operation conditions and the correlation to DC-stress tests has been investigated.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488841