Electrical properties of a-C thin film deposited using methane gas as precursor

Amorphous carbon (a-C) thin films were deposited on quartz substrate at various temperatures with thermal chemical vapor deposition (CVD) technique using methane gas as precursor. The deposited a-C thin films were characterized by Current Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. I...

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Bibliographic Details
Main Authors: Hussin, H, Mohamad, F, Hanapiah, S M A, Muhamad, M, Rusop, M
Format: Conference Proceeding
Language:English
Subjects:
Amorphous carbon
Amorphous materials
Chemical elements
Conductivity
Furnaces
methane gas
Optical films
Plasma temperature
Sputtering
Substrates
thermal CVD
Thin film devices
thin films
Transistors
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Description
Summary:Amorphous carbon (a-C) thin films were deposited on quartz substrate at various temperatures with thermal chemical vapor deposition (CVD) technique using methane gas as precursor. The deposited a-C thin films were characterized by Current Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. In this experiment, the pyrolysis process was successful to analyse the electrical and optical properties of a-C thin films deposited by thermal CVD using methane gas. The a-C films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, the resistivity is lower and thus gives the conductivity of a-C thin films increased due to the relation between the resistivity and conductivity are inversely proportional.
ISSN:2159-2047
2159-2055
DOI:10.1109/ICEDSA.2010.5503055