Growth and Characterization of GaAs/AlGaAs Core-Multishell Nanowires by Metalorganic Chemical Vapor Deposition

We have investigated the growth and photoluminescence (PL) characteristics of GaAs/AlGaAs core-multishell nanowires (NWs). Theses NWs are grown by means of vapor-liquid-solid (VLS) method for cores growth and metalorganic chemical vapor deposition (MOCVD) for multishell growth on GaAs (111)B substra...

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Bibliographic Details
Main Authors: Jingwei Guo, Hui Huang, Xian Ye, Xiaomin Ren, Shiwei Cai, Wei Wang, Qi Wang, Yongqing Huang
Format: Conference Proceeding
Language:English
Subjects:
Chemical vapor deposition
Gallium arsenide
Gold
MOCVD
Nanowires
Optical surface waves
Scanning electron microscopy
Substrates
Temperature
Transmission electron microscopy
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Summary:We have investigated the growth and photoluminescence (PL) characteristics of GaAs/AlGaAs core-multishell nanowires (NWs). Theses NWs are grown by means of vapor-liquid-solid (VLS) method for cores growth and metalorganic chemical vapor deposition (MOCVD) for multishell growth on GaAs (111)B substrate. The crystallographic quality is perfect in the body of GaAs/AlGaAs core-multishell NWs and a small axial elongation with some defects at the top of NWs was also achieved. The PL spectra reveal that GaAs/AlGaAs core-multishell NWs have much higher optical efficiency than bare GaAs NWs.
ISSN:2156-8464
2156-8480
DOI:10.1109/SOPO.2010.5504052