III-V MOSFETs: Scaling laws, scaling limits, fabrication processes

III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain cu...

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Main Authors: Rodwell, M. J. W., Shin, B., Lee, Yong-ju, Steiger, S., Lee, S., Ryu, H., Tan, Y., Hegde, G., Wang, L., Chagarov, E., Gossard, A. C., Singisetti, U., Frensley, W., Kummel, A., Palmstrom, C., McIntyre, Paul C, Boykin, T., Klimek, G., Asbeck, P., Wistey, M., Burek, G. J., Carter, A., Baraskar, A., Law, J., Thibeault, B. J., Kim, Eun Ji
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Conductivity
Cutoff frequency
Fabrication
FETs
III-V semiconductor materials
Low voltage
MOSFETs
Transconductance
Very large scale integration
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Summary:III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the inversion layer depth, and increasing the channel 2-DEG density of states. We here describe both nm self-aligned fabrication processes and channel designs to address these scaling limits.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2010.5515914