A 68% efficiency, C-band 100W GaN power amplifier for space applications

This paper describes a high efficiency (68%), high output power (100 W), high reliability GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd-harmonic frequency (2f o ) tuning circuits in the input and output matching circuits. The input circuit uses open-ended s...

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Bibliographic Details
Main Authors: Yamasaki, T, Kittaka, Y, Minamide, H, Yamauchi, K, Miwa, S, Goto, S, Nakayama, M, Kohno, M, Yoshida, N
Format: Conference Proceeding
Language:English
Subjects:
Circuit optimization
FETs
Frequency
Gallium nitride
GaN HEMT
HEMTs
High efficiency
High power amplifiers
High reliability
Impedance matching
Power amplifiers
Power generation
Reflection
Satellite communication
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Summary:This paper describes a high efficiency (68%), high output power (100 W), high reliability GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd-harmonic frequency (2f o ) tuning circuits in the input and output matching circuits. The input circuit uses open-ended stubs located nearby FET gate terminals for setting the 2f o reflection-phase at the optimum phase. In the output circuit, the optimum 2f o reflection phase is realized using three transmission-line transformers while matching loss is kept low at fundamental frequency. In addition, a 3000 hour's RF overdrive life test reveals that an estimated mean time to failure (MTTF) is 1×10 7 hours at 150°C channel temperature, proving that the amplifier has sufficient reliability for space applications. To the best of our knowledge, the efficiency of 68% is the highest of 100-W class C-band amplifiers ever reported, and is also comparable to that of commercially available traveling wave tube amplifiers.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2010.5517228