N-polar GaN-based MIS-HEMTs for Mixed Signal Applications

GaN-based transistors are attractive for the next generation RF power and mixed signal electronics due to their high breakdown field and high carrier saturation velocity. III-N high electron mobility transistors (HEMTs) fabricated on the N-face of GaN are well-suited to address the problems of poor...

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Bibliographic Details
Main Authors: Mishra, U. K., Wong, M., Nidhi, N., Dasgupta, S., Brown, D. F., Swenson, B. L., Keller, S., Speck, J. S.
Format: Conference Proceeding
Language:English
Subjects:
Contact resistance
Electric breakdown
Electron mobility
Gallium nitride
HEMTs
MODFETs
Ohmic contacts
Radio frequency
RF signals
Transistors
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Summary:GaN-based transistors are attractive for the next generation RF power and mixed signal electronics due to their high breakdown field and high carrier saturation velocity. III-N high electron mobility transistors (HEMTs) fabricated on the N-face of GaN are well-suited to address the problems of poor electron confinement and high ohmic contact resistance in the highly scaled transistors. At 4 GHz, N-polar metal-insulator-semiconductor (MIS)-HEMTs with a gate length of 0.7 micron exhibited a highest output power density (Pout) of 8.1 W/mm and a highest power-added efficiency (PAE) of 71%, while a Pout of 4.2 W/mm and a PAE of 49% were achieved at 10 GHz. A high speed N-polar MIS-HEMT fabricated with a gate-first self-aligned InGaN-based ohmic contact regrowth technology was characterized, demonstrating an ultra-low contact resistance of 23 ohm-micron and a state-of-the-art fTxLG product of 16.8 GHz-micron with a gate length of 130 nm.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2010.5518201